Method for fabricating chamber parts

ABSTRACT

One example of the disclosure provides a method of fabricating a chamber component with a coating comprising a yttrium containing material with desired film properties. In one example, the method of fabricating a coating material includes providing a base structure comprising an aluminum containing material. The method further includes forming a coating layer that includes a yttrium containing material on the base structure. The method also includes thermal treating the coating layer to form a treated coating layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims benefit of U.S. Provisional Application Ser. No.62/804,545, filed Feb. 12, 2019, all of which are incorporated byreference in its entirety.

BACKGROUND Field

Examples of the present disclosure generally relate to a method andapparatus for plasma processing and, more specifically, to a method andapparatus for plasma processing with component parts having enhancedfilm properties.

Description of the Related Art

The fabrication of microelectronics or integrated circuit devicestypically involves a complicated process sequence requiring hundreds ofindividual steps performed on semiconductors, dielectric and conductivesubstrates. Examples of these process steps include oxidation,diffusion, ion implantation, thin film deposition, cleaning, etching andlithography. Plasma processes are often used for etching process andprocessing chamber cleaning process after thin film depositionprocesses. In chemical vapor deposition, reactive species are generatedby applying voltages to suitable process gases, and subsequent chemicalreactions result in the formation of a thin film on a substrate. Inplasma etching, a previously deposited film is exposed to the reactivespecies in a plasma, often through a patterned mask layer formed in aprior lithography step. Reactions between the reactive species and thedeposited film result in the removal, or etching, of the deposited film.

When chamber parts or process kits are exposed to the plasma environmentfor extended periods, chamber surface deterioration may occur due toreaction with the plasma species. For example, existing process kits orchamber component parts are often made of aluminum containing materials,such as aluminum oxide, aluminum alloys, aluminum oxynitride or aluminumnitride. Halogen-containing gases, e.g., fluorine- orchlorine-containing gases, are used in etching various material layersduring circuit fabrication. It is believed that aluminum containingmaterials are vulnerable to attack by fluorine species, resulting in theformation of Al_(x)F_(y)O_(z) on the surface of component parts. Suchetch by-product may come off as particles during processing, resultingin contamination and defects on the substrate during processing.Furthermore, some aluminum containing parts seem to be susceptible tobreakage, probably as a result of mechanical stress created duringmachining and cyclic exposure to temperature cycles and plasma. Forchemical vapor deposition process, the metal halogen containingcompounds often used as the precursors for deposition. These chemicalswill decompose to yield halogen gas species or molecules, which oftenstrongly corrode the chamber surface, especially the aluminum partsforming undesired Al_(x)F_(y)O_(z) side products. The cleanliness of thechamber surface is one of the crucial factors that would influence thedeposition performance. The chamber surface cleanliness also depends onthe chamber surface roughness. It is believed that a rougher chambercomponent surface may likely generate more particles during a depositionprocess.

Thus, there is a need for a chamber part that has a reliable surfacematerial for plasma applications, and for improved processes forfabricating such part.

SUMMARY

One example of the disclosure provides a method of fabricating a chambercomponent with a coating comprising yttrium containing material withdesired film properties. In one example, the method of fabricating acoating material includes providing a base structure comprising analuminum containing material. The method further includes forming acoating layer that includes a yttrium containing material on the basestructure. The method also includes thermal treating the coating layerto form a treated coating layer.

In another example, the method of fabricating a coating material,includes providing a base structure comprising an aluminum containingmaterial. A coating layer is formed. The coating layer includes ayttrium containing material on the base structure. The method furtherincludes laser treating the coating layer to form a treated coatinglayer.

In yet another example, a chamber component includes a laser treatedcoating layer. The laser treated coating layer includes a yttriumcontaining material on a chamber component. The laser treated coatinglayer has a film density greater than 4.0 g/cm³.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toexamples, some of which are illustrated in the appended drawings. It isto be noted, however, that the appended drawings illustrate only typicalexamples of this disclosure and are therefore not to be consideredlimiting of its scope, for the disclosure may admit to other equallyeffective examples.

FIG. 1 is a processing tool that may be utilized to form a coating on achamber component;

FIG. 2 is a schematic diagram of a plasma reactor having at least onechamber component made in the processing tool of FIG. 1 ;

FIG. 3 is a method for manufacturing a coating on a chamber componentutilizing the tool of FIG. 1 ;

FIGS. 4A-4C are schematic illustrations of cross sectional views of thecoating formed on the chamber component; and

FIG. 5 depicts a bottom view of a chamber component used in the plasmaetch reactor of FIG. 2 manufactured by the method of FIG. 3 .

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneexample may be beneficially incorporated in other examples withoutfurther recitation.

It is to be noted, however, that the appended drawings illustrate onlyexemplary examples of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective examples.

DETAILED DESCRIPTION

The present disclosure provides a method and an apparatus forfabricating plasma processing chamber parts with a coating with improvedcharacteristics such as enhanced chemical or plasma resistance. In oneexample, the coating material may comprise a yttrium containing materialwith enhanced film characteristics. Such enhanced characteristics areobtained when the coating layer disposed on the part is subjected to ahigh temperature treatment process after at least a portion of thecoating material is formed on the part. In one example, the coating maybe formed on a part followed by a high temperature treatment process,such as a laser treatment process, or other energy treatment process.

FIG. 1 depicts a processing tool 100 that may be utilized to treat acoating material formed on a surface of a substrate, such as a partutilized in a plasma processing chamber. The processing tool 100 may bea laser energy apparatus that directs laser energy to the coatingmaterial formed on the substrate. Alternatively, the processing tool 100may be any suitable energy providing apparatus that may provide thermalenergy, beam energy, light energy, or other suitable energy to alter thebonding structure or film properties of the coating material disposed onthe substrate.

The processing tool 100 has an enclosure 150 having a laser module 152,a stage 112 configured to support a substrate, such as the substrate106, a translation mechanism 124 configured to control the movement ofthe stage 112. An actuator system 108 may also be coupled to the stage112 to assist control and movement of the stage 112. It is noted thatthe substrate 106 here is a part that will be later utilized as achamber component in a plasma reactor.

The laser module 152 includes a laser radiation source 101, at least onelens 102 and an optical focusing module 104 disposed above the stage112. In one example, the laser radiation source 101 may be a lightsource made from Nd:YAG, Nd:YVO₄, crystalline disk, diode pumped fiberand other light source that can provide and emit a pulsed or continuouswave of radiation at a wavelength between about 187 nm and about 10,000nm, such as between about 248 nm and 2,100 nm. In another example, thelaser radiation source 101 may include multiple laser diodes, each ofwhich produce uniform and spatially coherent light at the samewavelength. In yet another example, the power of the cumulative laserdiode(s) is in the range of about 2 Watts to 200 Watts.

The focusing optical module 104 transforms the radiation emitted by thelaser radiation source 101 using at least one lens 102 into a line,spot, or other suitable beam configuration, of radiation 110 directed ata coating material (not shown) disposed on the substrate 106. Theradiation 110 is selectively applied to a surface of the coatingmaterial to provide laser energy doze to discrete predetermined regionsof the coating material. In one example, the radiation 110 may beselectively applied to the surface of the coating material as many timesas needed until a desired change in the film properties, such as localstress or film density, present in the coating material is obtained. Inanother architecture, the laser may be reflected off a digitalmicro-mirror device, which then projects a laser pattern onto thesubstrate (enlarged to treat the whole substrate or in a small fieldwhich is scanned across the substrate) to build up the treatment dosagemap as needed.

Lens 102 may be any suitable lens, or series of lenses, capable offocusing radiation into a line or spot. In one example, lens 102 is acylindrical lens. Alternatively, lens 102 may be one or more concavelenses, convex lenses, plane mirrors, concave mirrors, convex mirrors,refractive lenses, diffractive lenses, Fresnel lenses, gradient indexlenses, or the like.

A detector 116 is disposed in the laser module 152 above the stage 112.In one example, the detector 116 may be an optical detector may providea light source 120 with different wavelengths to inspect and detect filmproperties of the coating material and/or the substrate 106 positionedon the stage 112. The light source 120 may be reflected from thesubstrate 106 or the coating material disposed thereon, forming areflected light beam 122 back to the detector 116 for in-time feedbackcontrol. In one example, the detector 116 and light source 120 may formpart of an optical microscope (OM) that may be used to view individualdevice die pattern or features formed in the coating material on thesubstrate 106. In another example, the detector 116 may be a metrologytool or a sensor capable of detecting local thickness, stress,refractive index (n&k), surface roughness, film density or resistivityon the material layer and/or the substrate 106 prior to performing alaser energy process. In yet another example, the detector 116 mayinclude a camera that may capture images of the coating material and/orthe substrate 106 so as to analyze the coating material and/or thesubstrate 106 based on the image color contrast, image brightnesscontrast, image comparison and the like. In another example, thedetector 116 may be any suitable detector that may detect different filmproperties or characteristics, such as stress, surface roughness, filmdensity, of the substrate or the film layers disposed on the substrate.

The detector 116 may linearly scan the substrate surface across a linearregion of the coating material. The detector 116 may also help toidentify the coordinate, alignment, or orientation of the substrate 106.The detector 116 may scan the substrate 106 as the substrate 106advances in an X-direction 170. Similarly, the detector 116 may scan thesubstrate 106 as the substrate 106 moves in a Y-direction 180 as thetranslation mechanism 124 moves the stage 112. The detector 116 may becoupled to a controller 190, so as to control movement and data transferfrom the detector 116 or other detectors or computing system to thelaser module 152.

The controller 190 may be a high speed computer configured to controlthe detector 116 and/or the laser module 152 to perform an opticaldetection process and/or a laser energy treatment process. In oneexample, the optical detection process is performed by the detector 116prior to the laser energy treatment process, so that the processparameters set in a laser energy treatment recipe for performing a laserenergy process may be based on the measurement data received from theoptical detection process. In one example, the controller 190 may befurther coupled to a data computing system (not shown) to obtain data orcomputed algorithm from the data computing system so as to assistdetermining a proper recipe to perform the laser energy treatmentprocess on the coating material on the substrate 106.

In one example, the translation mechanism 124 may be configured totranslate the stage 112 and the radiation 110 relative to one another.The translation mechanism 124 may be configured to move the stage 112 inpositive and negative X-direction 170 and positive and negativeY-direction 180. In one example, the translation mechanism 124 coupledto the stage 112 is adapted to move the stage 112 relative to the lasermodule 152 and/or the detector 116. In another example, the translationmechanism 124 is coupled to the laser module 152 and/or the focusingoptical module 104 and/or the detector 116 to move the laser radiationsource 101, the focusing optical module 104, and/or the detector 116 tocause the beam of energy to move relative to the substrate 106 that isdisposed on the stage 112. In yet another example, the translationmechanism 124 moves the laser radiation source 101 and/or the focusingoptical module 104, the detector 116, and the stage 112. Any suitabletranslation mechanism may be used, such as a conveyor system, rack andpinion system, or an x/y actuator, a multiple robot, or other suitablemechanical or electro-mechanical mechanism to use for the translationmechanism 124. Alternatively, the stage 112 may be configured to bestationary, while a plurality of galvanometric heads (not shown) may bedisposed around the substrate edge to direct radiation from the laserradiation source 101 to the substrate as needed.

The translation mechanism 124 may be coupled to the controller 190 tocontrol the scan speed at which the stage 112 and the laser radiationsource 101 move relative to one another. In one example, the laserradiation source 101 is an optical radiation source. The controller 190may receive data from the detector 116 or from the data computing systemto generate an optimized laser energy recipe that is used to control thelaser module 152 to perform an optimized laser dose patterning process.The stage 112 and the radiation 110 and/or the laser radiation source101 are moved relative to one another so that energy is delivered todiscrete desired regions of the coating material. In one example, thetranslation mechanism 124 moves at a constant speed. In another example,the translation of the stage 112 and movement of the line of radiation110 follow different paths that are controlled by the controller 190.

FIG. 2 is a cross sectional view of the processing chamber 232 suitablefor performing a plasma deposition process (e.g., a plasma enhanced CVDor a metal organic CVD) where a part (e.g., a chamber component) may beutilized therein. The processing chamber 232 may be a suitably adaptedCENTURA®, PRODUCER® SE or PRODUCER® GT or PRODUCER® XP processing systemavailable from Applied Materials, Inc., of Santa Clara, Calif. It iscontemplated that other processing systems, including those produced byother manufacturers, may benefit from examples described herein.

The processing chamber 232 includes a chamber body 251. The chamber body251 includes a lid 225, a sidewall 201 and a bottom wall 222 that definean interior volume 226.

A pedestal 250 is provided in the interior volume 226 of the chamberbody 251. The pedestal 250 may be fabricated from aluminum, ceramic,aluminum nitride, and other suitable materials. In one example, thepedestal 250 is fabricated by a ceramic material, such as aluminumnitride, which is a material suitable for use in a high temperatureenvironment, such as a plasma process environment, without causingthermal damage to the pedestal 250. The pedestal 250 may be moved in theY-direction 180 inside the chamber body 251 using a lift mechanism (notshown). The pedestal 250 is supported by a shaft 260. The shaft 260 hasa hollow center through which wiring is passed. The wiring couplescircuits to electrodes disposed within the pedestal 250.

The pedestal 250 may include an embedded heater element 270 suitable forcontrolling the temperature of a substrate 290 supported on the pedestal250. In one example, the pedestal 250 may be resistively heated byapplying an electric current from a power supply 206 to the heaterelement 270. In one example, the heater element 270 may be made of anickel-chromium wire encapsulated in a nickel-iron-chromium alloy (e.g.,INCOLOY®) sheath tube. The electric current supplied from the powersupply 206 is regulated by a controller 210 to control the heatgenerated by the heater element 270, thus maintaining the substrate 290and the pedestal 250 at a substantially constant temperature during filmdeposition at any suitable temperature range. In another example, thepedestal 250 may be maintained at room temperature as needed. In yetanother example, the pedestal 250 may also include a chiller (not shown)as needed to cool the pedestal 250 at a range lower than roomtemperature as needed. The supplied electric current may be adjusted toselectively control the temperature of the pedestal 250 between about100 degrees Celsius to about 700 degrees Celsius.

A temperature sensor 272, such as a thermocouple, may be embedded in thepedestal 250 to monitor the temperature of the pedestal 250 in aconventional manner. The measured temperature is used by the controller210 to control the power supplied to the heater element 270 to maintainthe substrate at a desired temperature.

The pedestal 250 can include a plurality of lift pins (not shown)disposed therethrough that are configured to lift the substrate 290 fromthe pedestal 250 and facilitate exchange of the substrate 290 with arobot (not shown) in a conventional manner.

The pedestal 250 includes at least one electrode 292 for retaining thesubstrate 290 on the pedestal 250. The electrode 292 is driven by achucking power source 208 to develop an electrostatic force that holdsthe substrate 290 to the pedestal surface, as is conventionally known.Alternatively, the substrate 290 may be retained to the pedestal 250 byclamping, vacuum or gravity.

In one example, the pedestal 250 is configured as a cathode having theelectrode 292 embedded therein, coupled to at least one RF bias powersource, shown in FIG. 2 as two RF bias power sources 284, 286. Althoughthe example depicted in FIG. 2 shows two RF bias power sources, 284,286. It is noted that the number of the RF bias power sources 284, 286may be any number as needed. The RF bias power sources 284, 286 arecoupled between the electrode 292 disposed in the pedestal 250 andanother electrode, such as a gas distribution plate 242 or lid 225 ofthe processing chamber 232. The RF bias power source 284, 286 excitesand sustains a plasma discharge formed from the gases disposed in theprocessing region of the processing chamber 232.

In the example depicted in FIG. 2 , the dual RF bias power sources 284,286 are coupled to the electrode 292 disposed in the pedestal 250through a matching circuit 204. The signal generated by the RF biaspower source 284, 286 is delivered through matching circuit 204 to thepedestal 250 through a single feed to ionize the gas mixture provided inthe processing chamber 232, thus providing ion energy necessary forperforming a deposition or other plasma enhanced process. The RF biaspower sources 284, 286 are generally capable of producing an RF signalhaving a frequency of from about 50 kHz to about 200 MHz and a powerbetween about 0 Watts and about 5000 Watts. The chucking power source208 and the matching circuit 204 are coupled to an upper electrode 254.The upper electrode 254 is configured to electrostatically chuck asubstrate 290 to the top surface 292 of the pedestal 250.

A vacuum pump 202 is coupled to a port formed in the bottom wall 222 ofthe chamber body 251. The vacuum pump 202 is used to maintain a desiredgas pressure in the chamber body 251. The vacuum pump 202 also evacuatespost-processing gases and by-products of the process from the chamberbody 251.

The processing chamber 232 includes one or more gas delivery passages244 coupled through the lid 225 of the processing chamber 232. The gasdelivery passages 244 and the vacuum pump 202 are positioned at oppositeends of the processing chamber 232 to induce laminar flow within theinterior volume 226 to minimize particulate contamination.

The gas delivery passages 244 are coupled to a gas panel 293 through aremote plasma source (RPS) 248 to provide a gas mixture into theinterior volume 226. In one example, the gas mixture supplied throughthe gas delivery passages 244 may be further delivered through a gasdistribution plate 242 disposed below the gas delivery passages 244. Inone example, the gas distribution plate 242 having a plurality ofapertures 243 is coupled to the lid 225 of the chamber body 251 abovethe pedestal 250. The apertures 243 of the gas distribution plate 242are utilized to introduce process gases from the gas panel 293 into thechamber body 251. The apertures 243 may have different sizes, number,distributions, shape, design, and diameters to facilitate the flow ofthe various process gases for different process requirements. A plasmais formed from the process gas mixture exiting the gas distributionplate 242 to enhance thermal decomposition of the process gasesresulting in the deposition of material on a surface 291 of thesubstrate 290.

The gas distribution plate 242 and the pedestal 250 may be formed a pairof spaced apart electrodes in the interior volume 226. One or more RFsources 247 provide a bias potential through a matching network 245 tothe gas distribution plate 242 to facilitate generation of a plasmabetween the gas distribution plate 242 and the pedestal 250.Alternatively, the RF sources 247 and matching network 245 may becoupled to the gas distribution plate 242, pedestal 250, or coupled toboth the gas distribution plate 242 and the pedestal 250. In oneexample, the RF sources 247 and matching network 245 may be coupled toan antenna (not shown) disposed exterior to the chamber body 251. In oneexample, the RF sources 247 may provide between about 10 Watts and about3000 Watts at a frequency of about 30 kHz to about 13.6 MHz.Alternatively, the RF source 247 may be a microwave generator thatprovide microwave power to the gas distribution plate 242 that assistsgeneration of the plasma in the interior volume 226.

Examples of gases that may be supplied from the gas panel 293 mayinclude a silicon containing gas, fluorine continuing gas, oxygencontaining gas, hydrogen containing gas inert gas and carrier gases.Suitable examples of the reacting gases includes a silicon containinggas, such as SiH₄, Si₂H₆, SiF₄, SiH₂Cl₂, Si₄H₁₀, Si₅H₁₂, TEOS and thelike. Suitable carrier gas includes nitrogen (N₂), argon (Ar), hydrogen(H₂), alkanes, alkenes, helium (He), oxygen (O₂), ozone (O₃), watervapor (H₂O), and the like.

In one example, the remote plasma source (RPS) 248 may be alternativelycoupled to the gas delivery passages 244 to assist in forming a plasmafrom the gases supplied from the gas panel 293 into the in the interiorvolume 226. The remote plasma source 248 provides plasma formed from thegas mixture provided by the gas panel 293 to the processing chamber 232.

The controller 210 includes a central processing unit (CPU) 212, amemory 216, and a support circuit 214 utilized to control the processsequence and regulate the gas flows from the gas panel 293. The CPU 212may be of any form of a general purpose computer processor that may beused in an industrial setting. The software routines can be stored inthe memory 216, such as random access memory, read only memory, floppy,or hard disk drive, or other form of digital storage. The supportcircuit 214 is conventionally coupled to the CPU 212 and may includecache, clock circuits, input/output systems, power supplies, and thelike. Bi-directional communications between the controller 210 and thevarious components of the processing chamber 232 are handled throughnumerous signal cables collectively referred to as signal buses 218,some of which are illustrated in FIG. 2 .

It is noted that all of the above described chamber components, such asthe gas distribution plate 242, or pedestal 250, may have a coatingmaterial fabricated by the method described below to enhance the surfaceprotection and chemical/plasma resistance.

FIG. 3 illustrates one example of a method 300 that can be used tofabricate a coating material including a yttrium containing material(yttrium oxide (Y₂O₃) or Y_(x)O_(y)F_(z) with metal dopants, such as Alor Zr) on a base structure, such as a part or a processing chamber 232component. Suitable examples of the yttrium containing material includeyttrium oxide or fluorine yttrium oxide, fluorine yttrium oxide withmetal dopants (AlYOF or ZrYOF). The base structure includes an aluminumcontaining material. The method 300 starts at operation 302 by providinga base structure, such as the base structure 402 depicted in FIG. 4A,into a spray coating chamber (not shown). In one example, the basestructure 402 may be a ceramic material, a metal dielectric material,such as Al₂O₃, AlN, AlON, bulk yttrium, suitable rare earth containingmaterials and the like. In one example, the base structure 402 is madefrom Al₂O₃ that allows a coating structure to be formed thereon.

At operation 304, a spraying coating deposition process is performed toform a coating layer 404 on a first surface 403 of the base structure402, as shown in FIG. 4B. The coating layer 404 includes a yttriumcontaining material (yttrium oxide (Y₂O₃) or Y_(x)O_(y)F_(z) with metaldopants, such as Al or Zr). It is noted that any suitable coatingchamber, such as liquid spray coating, gel spraying coating, plasmaspray coating or other suitable deposition coating chambers may beutilized to coat a coating layer 404 that includes yttria onto the basestructure 402.

In one example, the yttrium containing material (yttrium oxide (Y₂O₃) orY_(x)O_(y)F_(z) with metal dopants, such as Al or Zr) in powder form maybe used as the starting material, and a slurry is formed by adding othercomponents such as water, binder, and suitable additives that may beused to facilitate the fabrication process of the coating layer 404. Theslurry may be then sprayed onto the first surface 403 of the basestructure 402 to form the coating layer 404. A plasma may be generatedto assist spraying the slurry onto the first surface 403 uniformlyacross the base structure 402, assisting coating the coating layer 404on the base structure 402. In one example, the yttria powder may have anaverage particle size of between about 15 μm and about 0.1 μm. Yttriapowder having smaller particle size may assist providing a relativelysmoother surface of the coating layer 404, such as less substrateroughness as needed. In one example, the first coating layer is plasmasprayed coating on the base structure 402.

At operation 306, after the coating layer 404 is formed, a hightemperature treatment (HIT) process is performed, forming a treatedlayer 406 on a second surface 405 of the coating layer 404, as shown inFIG. 4C. The high temperature treatment (HIT) process may be performedin the processing tool 100 depicted in FIG. 1 . The high temperaturetreatment (HTT) process treats the surface of the coating layer 404 toalter the substrate surface properties. The bonding structures and thefilm properties of the coating layer 404 when treated at operation 304yields a robust film structure (e.g., the treated layer 406) having lowdefect density in the treated layer 406. Furthermore, the hightemperature treatment (HTT) process may assist removing contaminantsfrom the surface of the coating layer 404, thus providing a good contactinterface as well as avoiding particle accumulation on the coating layer404. Furthermore, the high temperature treatment (HTT) process may alsobe performed to modify the morphology and/or surface roughness of thesurface of the coating layer 404, forming the treated layer 406 with arelatively smoother surface, compared to the coating layer 404, so as toimprove the adhesion of the subsequently deposited layers formed thereonas needed. In some examples, the high temperature treatment (HTT)process may or may not incorporate certain elements, such as oxygen ornitrogen, if needed, to react with the unsaturated bonds, loose bonds ordangling bonds from the coating layer 404 so as to improve the bondingenergy and the bonding structures of the coating layer 404.

In one example, the high temperature treatment (HTT) process atoperation 306 may be performed with or without an ambient gas in aprocessing chamber, such as the processing tool 100 depicted in FIG. 1 .

In one example, the high temperature treatment (HTT) process isperformed by applying a series of laser pulses to discrete areas of thecoating layer 404 according to the specific location requirementsidentified by high temperature treatment (HTT) process requirement. Thebursts of laser pulses may have a laser of wavelength greater than 193nm, for example between about 248 nm and about 10,000 nm, for exampleabout 1,100 nm. Each pulse is focused to predetermined regions of thecoating layer 404 to be treated.

In one example, the spot size of the laser pulse is controlled atbetween about 10 μm and about 1000 μm. The spot size of the laser pulsemay be configured in a manner to alter film property at certainlocations of the film layer with desired dimension, feature, pattern,and geometries.

The laser pulse may have energy density (e.g., fluence) between about 1microJoules per square centimeter (μJ/cm²) and about 2 microJoules persquare centimeter (μJ/cm²) at a frequency between about 1 kHz and about20 MHz. Each laser pulse length is configured to have a duration ofabout 10 micro-seconds up to 10 femto-seconds. During the lasertreatment process, the base structure temperature may be maintained atbetween about 15 degrees Celsius and about 75 degrees Celsius.

The laser pulse changes the local stress of the film layer withoutannealing or otherwise heat treating the coating layer 404 to form thetreated layer 406 with desired surface roughness. A single laser pulsemay be used or multiple laser doses applied to the same substratelocation. After a first substrate location is laser treated, a secondsubstrate location is then laser treated by positioning the laser pulse(or substrate) to direct the pulse to a second location. The hightemperature treatment (HTT) process requirement is continued until apredetermined time period is reached.

In some examples, an ambient gas may be supplied in the enclosure 150 ofthe processing tool 100 while performing the high temperature treatment(HTT) process so that some of the elements from the ambient gas may betreated or incorporated into the treated layer 406 as needed. In oneexample, the ambient gas may be an oxygen containing gas, such as O₂,N₂O, NO₂, H₂O₂, H₂O or O₃, a nitrogen containing gas, such as N₂O, NH₃,NO₂, N₂, or the like, or an inert gas, such as Ar and He.

In some examples, the amount of ambient gas supplied into the enclosure150 may be varied and/or adjusted to accommodate, for example, thedepth/thickness of the elements as incorporated to form the treatedlayer 406.

The laser energy treatment process may alter, release or eliminatelocalized residual stress in discrete regions of the coating layer 404,so as to locally change the in-plane strain in the film layer. By doingso, the local stress change of the coating layer 404 during the hightemperature treatment process can also provide the resultant treatedlayer 406 with a relatively planar surface, so as to reduce surfaceroughness of the treated layer 406.

At operation 308, after the treatment process at operation 306, the basestructure with a coating material 450 (the resultant treated layer 406converted from the coating layer 404) formed thereon is formed with thedesired film properties. In one example, the coating material 450 mayhave a surface roughness greater than Ra 5 micrometer. The density ofthe coating material 450 may be greater than 4.0 g/cm³, such as betweenabout 4.0 g/cm³ and 5.2 g/cm³. In the example wherein the yttriumcontaining material of the coating material 450 includes yttria. Theyttria of the coating material 450 may have a yttrium to oxide (Y:O)ratio between about 1:1 and 2:1. The coating material 450 has athickness between about 0.5 μm and about 50 μm. The coating material 450has a pore density less than 2%.

As the coating material 450 formed on the base structure 402 has arelatively robust structure, upon depositing such coating material 450on the chamber component in a processing chamber, such as the processingchamber 232 in FIG. 2 , the coating material 450 may maintain a goodsurface condition while undergoing the attack of the aggressive plasmaspecies during a plasma process. Thus, the likelihood of generatingparticles or contamination from a chamber wall, a substrate support, agas distribution plate or other chamber components from the processingchamber 232 is reduced.

FIG. 5 depicts a schematic illustration of a bottom view of a gasdistribution plate 242 that can be fabricated with the coating material450 formed thereon according to examples of this disclosure. Theyttria-coated gas distribution plate 242 can be used in the processingchamber 232 or other plasma chambers, such as those for etching ordeposition applications, among others. The gas distribution plate 242 isprovided with a plurality of apertures 243 to allow passage of processgases and/or plasma species into a process region of the processingchamber 232. The apertures 243 may be arranged in a regular pattern onthe gas distribution plate 242, or they may be arranged in differentpatterns to allow for different gas distribution needs. In the exampledepicted in FIG. 5 , the coating material 450 is formed on a bottomsurface of the gas distribution plate 242 (the same as the gasdistribution plate 242 shown in FIG. 2 ). The coating material 450coated on a surface of the gas distribution plate 242 that can assistthe gas distribution plate 242 from being attacked by the aggressiveplasma species during a plasma process, thus reducing likelihood ofgenerating particles or contamination falling on the substrate 290positioned in the processing chamber 232. Thus, product yield andsubstrate 290 cleanliness may be enhanced and maintained.

Examples of this disclosure can be used to fabricate the coatingmaterial including yttria on a chamber part for a variety ofapplications. These enhanced surface coating chamber parts are suitablefor use in corrosive environments such as those encountered in plasmaprocesses. A variety of plasma deposition and etch chambers may benefitfrom the teachings disclosed herein, for example, dielectric etchchambers such as the ENABLER® etch chamber, which may be part of asemiconductor wafer processing system such as the CENTURA® system, adielectric deposition chamber, such as the PRODUCER® or ENDURA®deposition chamber, which may be part of a semiconductor waferprocessing system, the eMax etch chamber, the Producer etch chamber, aswell as conductor etch chambers such as AdvantEdge Metal and the DPSMetal chambers, among others, all of which are available from AppliedMaterials, Inc. of Santa Clara, Calif. It is contemplated that otherplasma reactors, including those from other manufacturers, may beadapted to benefit from the disclosure.

While the foregoing is directed to examples of the present disclosure,other and further examples of the disclosure may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

The invention claimed is:
 1. A method of fabricating a coating material,comprising: providing a base structure comprising an aluminum containingmaterial; forming a coating layer comprising a yttrium containingmaterial on the base structure; and thermal treating the coating layerwith a thermal source to form a treated coating layer, wherein thethermal source has an energy density between about 1 μJ/cm² and about 2μJ/cm², and a frequency between about 1 kHz and about 20 MHz.
 2. Themethod of claim 1, wherein the yttrium containing material is at leastone of yttrium oxide or fluorine yttrium oxide, or fluorine yttriumoxide with metal dopants.
 3. The method of claim 1, wherein thermaltreating the coating layer comprises: performing a laser treatmentprocess on the coating layer.
 4. The method of claim 3, whereinperforming the laser treatment process comprises: directing a lightradiation from a laser module to a surface of the coating layer.
 5. Themethod of claim 4, wherein the laser module provides the light radiationhaving a wavelength between about 187 nm and about 10000 nm.
 6. Themethod of claim 4, wherein the laser module provides the light radiationhaving a wavelength between 248 nm and about 2100 nm.
 7. The method ofclaim 1, wherein thermal treating the coating layer further comprises:maintaining a base structure temperature at between about 15 degreesCelsius and about 75 degrees Celsius.
 8. The method of claim 1, whereinthe yttrium containing material is yttrium oxide.
 9. The method of claim1, wherein the treated coating layer has a film density greater than 4g/cm³.
 10. The method of claim 1, wherein the treated coating layer hasa thickness between about 0.5 μm and about 50 μm.
 11. The method ofclaim 1, wherein the base structure is a gas distribution plate or asubstrate support assembly in a processing chamber.
 12. The method ofclaim 1, wherein the base structure is a chamber component utilized in aplasma processing chamber.
 13. The method of claim 1, wherein thetreated coating layer has a surface roughness greater than Ra 5micrometer.
 14. The method of claim 1, wherein the aluminum containingmaterial of the base structure is Al₂O₃, AlN or a ceramic material. 15.The method of claim 1, wherein thermal treating the coating layerfurther comprises: removing surface particles from the base structure.16. A method of fabricating a coating material, comprising: providing abase structure comprising an aluminum containing material; forming acoating layer comprising a yttrium containing material on the basestructure; and laser treating the coating layer to form a treatedcoating layer, wherein the laser has an energy density between about 1μJ/cm² and about 2 μJ/cm², and a frequency between about 1 kHz and about20 MHz.
 17. The method of claim 16, wherein the yttrium containingmaterial is at least one of yttrium oxide, fluorine yttrium oxide, orfluorine yttrium oxide with metal dopants.
 18. The method of claim 16,wherein the base structure is a gas distribution plate disposed in aplasma processing chamber.
 19. A method of fabricating a coatingmaterial, comprising: forming a coating layer comprising a yttriumcontaining material on a base structure, the base structure comprisingan aluminum containing material; and laser treating the coating layer toform a treated coating layer, the laser treating comprising: applying aseries of laser pulses to the coating layer, wherein each laser pulse ofthe series of laser pulses has an energy density within a range of about1 μJ/cm² to about 2 μJ/cm², a frequency within a range of about 1 kHz toabout 20 MHz, a wavelength within a range of about 248 nm to about 2100nm, and a duration within a range of about 10 femto-seconds to about 10micro-seconds, and reacting a gas with the coating layer, the gascontaining one or more of oxygen or nitrogen.
 20. The method of claim19, wherein the gas reacts with the coating layer while the series oflaser pulses are applied to alter a bonding energy of the coating layer,and the treated coating layer has: a density within a range of about 4.0g/cm³ to about 5.2 g/cm³; a yttrium to oxide (Y:O) ratio within a rangeof about 1:1 to about 2:1; a thickness within a range of about 0.5 μm toabout 50 μm; and a pore density less than 2%.